Identification of double quantum dots in nanowire devices by single-gate sweeps

• Inokawa Hiroshi

  Research Institute of Electronics, Shizuoka University, Hamamatsu 243-8011, Japan

• Takahashi Yasuo

  Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan

抄録

The drain current-gate voltage characteristics of the double quantum dot devices are classified theoretically based on periodic multiple peaks separated by deep valleys, and are observed experimentally in silicon nanowire devices. Inspired by the unique patterns in the characteristics, delta-literals for multiple-valued logic are proposed as a new application of the double quantum dots.

収録刊行物

• JJAP Conference Proceedings

  JJAP Conference Proceedings 4 (0), 011201-011201, 2016

  公益社団法人 応用物理学会

詳細情報

• CRID: 1390575882595269120
• NII論文ID: 120005746315
• DOI: 10.56646/jjapcp.4.0_011201
• ISSN: 27582450
• HANDLE: 10297/9354
• Web Site: https://shizuoka.repo.nii.ac.jp/records/9028
• Web Site: https://www.jstage.jst.go.jp/article/jjapcp/4/0/4_011201/_pdf
• 本文言語コード: en
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• 抄録ライセンスフラグ: 使用可