Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate

• Nakakubo, Yoshinori

• Eriguchi, Koji

• Ono, Kouichi

Journal

• ECS Journal of Solid State Science and Technology

  ECS Journal of Solid State Science and Technology 4 (6), N5077-N5083, 2015-02-14

  Electrochemical Society

Keywords

• capacitance
• defect
• Plasma damage
• silicon
• spectroscopic ellipsometry

Details

• CRID: 1050282810809436288
• NII Article ID: 120005756254
• NII Book ID: AA12582725
• ISSN: 21628769
• HANDLE: 2433/210585
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • CiNii Articles