Surface smoothing during plasma etching of Si in Cl2

• Nakazaki, Nobuya

• Matsumoto, Haruka

• Tsuda, Hirotaka

• Takao, Yoshinori

• Eriguchi, Koji

• Ono, Kouichi

Abstract

Effects of initial roughness on the evolution of plasma-induced surface roughness have been investigated during Si etching in inductively coupled Cl[2] plasmas, as a function of rf bias power or ion incident energy in the range Ei ≈ 20–500 eV. Experiments showed that smoothing of initially rough surfaces as well as non-roughening of initially planar surfaces can be achieved by plasma etching in the smoothing mode (at high Ei) with some threshold for the initial roughness, above which laterally extended crater-like features were observed to evolve during smoothing. Monte Carlo simulations of the surface feature evolution indicated that the smoothing/non-roughening is attributed primarily to reduced effects of the ion scattering or reflection from microscopically roughened feature surfaces on incidence.

Journal

• Applied Physics Letters

  Applied Physics Letters 109 (20), 204101-1-204101-5, 2016-11-14

  AIP Publishing

Details

• CRID: 1050564285791847040
• NII Article ID: 120005893556
• NII Article ID: 120005866914
• NII Book ID: AA00543431
• ISSN: 00036951
• HANDLE: 2433/217469
• Web Site: http://hdl.handle.net/10131/10296
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • CiNii Articles