Ambipolar Transport in Bilayer Organic Field-Effect Transistor Based on Poly(3-hexylthiophene) and Fullerene Derivatives

• Morita, Takeomi

• Singh, Vipul

• Oku, Shinya

• Nagamatsu, Shuichi

• Takashima, Wataru

• Hayase, Shuzi

• Kaneto, Keiichi

Abstract

Ambipolar characteristics in an organic field-effect transistor (FET) with a bilayer structure consisting of poly(3-hexylthiophene) (P3HT) and a fullerene derivative (PCBM) are reported. P3HT was deposited by a floating film transfer method (FTM) with toluene solution on spin-coated PCBM. The FTM-deposited film was found to show relatively high hole mobility even when cast using toluene solution. Even after coating P3HT on PCBM by FTM, a relatively high n-type transport was obtained. This indicates that FTM employed in this study is a mild way to coat an organic thin film on an organic semiconductor layer in terms of minimizing the effect of carrier transport in the underlayer. The transport characteristics have been discussed in comparison with those of ambipolar FETs prepared by other methods previously reported.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 49 (4R), 041601-1-041601-6, 2010-04-20

  社団法人応用物理学会

Keywords

• Floating film transfer method
• Polythiophene
• PCBM
• Field effect transistor
• Ambipolar
• transport

Details

• CRID: 1050564288864316544
• NII Article ID: 120005893829
• NII Book ID: AA12295836
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.49.041601
• HANDLE: 10228/5944
• NDL BIB ID: 10653349
• Web Site: https://kyutech.repo.nii.ac.jp/records/4724
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I10653349
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.49.041601
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.49.041601/pdf
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • NDL
  • Crossref
  • CiNii Articles