The Density of States Spectrum for the Impurity Band in Highly-Compensated Heavily Arsenic-Doped n-Type Germanium

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The density of states spectrum for the impurity band is obtained by adopting a rigid band\ picture and measuring the temperature dependence of the resistivity and the Hall effect for\ highly- compensated heavily arsenic-doped n-type germanium crystals with initial donor\ concentrations per cm^3 of 3.24 x 10^18, 3.32 x 10^18 and 5.20 x 10^18 and with various degrees\ of compensation realized by thermal-neutron irradiation and isochronal anneals. Obtained\ density of states decreases exponentially towards the inside of the energy gap, and the\ density of states spectrum is essentially independent on the initial donor concentration.

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