Characterization of spin-orbit coupling in gated wire structures using Al_2O_3/In_0.75Ga_0.25As/In_0.75Al_0.25As inverted heterojunctions
抄録
Gated parallel wire structures obtained from inverted-modulation-doped heterojunctions made of high-In-content metamorphic InGaAs/InAlAs were investigated. The narrowest wire width was found to be ∼190 nm made using electron beam lithography and reactive ion etching. Magneto-transport was measured at low temperatures. Weak anti-localization and suppression with applied negative gate voltages were observed in low-mobility wide wires (1360 nm), which were considered for a two-dimensional system. The dependence on the gate voltage of spin-orbit coupling parameters was also obtained by fitting. The parameters decreased as the negative gate voltages increased. The trend might originate not from the electron system at the InGaAs/InAlAs interface but from the other electron system accumulated at the Al_2O_3/InGaAs interface, which can also contribute to conductivity. In high-mobility narrow wires (190 nm), which are close to a one-dimensional system, weak anti-localization peaks were still observed, indicating strong spin-orbit coupling. In addition, the critical widths of wires corresponding to zero conductance were estimated to be <100 nm. Therefore, our metamorphic modulation doped heterojunctions seem suitable for smaller spin-FETs.
identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/14067
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 120 (14), 142123-1-142123-4, 2016-09-30
American Institute of Physics
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詳細情報
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- CRID
- 1050282812515216768
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- NII論文ID
- 120006027368
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- ISSN
- 00218979
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- Web Site
- http://hdl.handle.net/10119/14067
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB
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