Effects of Al and N2 flow sequences on the interface formation of AlN on sapphire by EVPE

• 船戸, 充

• Funato, Mitsuru

• Kawakami, Yoichi

抄録

The interface formation mechanisms of AlN films on sapphire substrates grown by the elementary source vapor phase epitaxy (EVPE) method, which is a new AlN bulk fabrication method using Al and N2 as precursors, are investigated. Supplying N2 after the substrate temperature reaches the growth temperature [Process N2(GT)] causes the interface to become rough due to the thermal decomposition of sapphire. Self-separation occasionally occurs with the Process N2(GT), suggesting that the rough interface generates self-separating films with little strain. On the other hand, supplying N2 beginning at room temperature forms a relatively smooth interface with voids, which can be realized by the reaction between a nitrided sapphire surface and an Al source.

収録刊行物

• Crystals

  Crystals 7 (5), 123-, 2017-04-27

  MDPI AG

キーワード

• AlN
• EVPE
• Self-separation
• Void

詳細情報

• CRID: 1050564285802701952
• NII論文ID: 120006318891
• ISSN: 20734352
• DOI: 10.3390/cryst7050123
• HANDLE: 2433/226318
• Web Site: https://www.mdpi.com/2073-4352/7/5/123/pdf
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
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  • CiNii Articles
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