Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

• Arita, Masashi

• Ohno, Yuuki

• Murakami, Yosuke

• Takamizawa, Keisuke

• Tsurumaki-Fukuchi, Atsushi

• Takahashi, Yasuo

抄録

The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process.

収録刊行物

• Nanoscale

  Nanoscale 8 (31), 14754-14766, 2016-08

  Royal Society of Chemistry

詳細情報

• CRID: 1050282813998334976
• NII論文ID: 120006334775
• HANDLE: 2115/67028
• ISSN: 20403364
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles