Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform

• Chiba, Kohei

• Tomioka, Katsuhiro

• Yoshida, Akinobu

• Motohisa, Junichi

抄録

Composition controllability of vertical InGaAs nanowires (NWs) on Si integrated by selective area growth was characterized for Si photonics in the optical telecommunication bands. The pitch of pre-patterned holes (NW sites) changed to an In/Ga alloy-composition in the solid phase during the NW growth. The In composition with a nanometer-scaled pitch differed completely from that with a mu m-scaled pitch. Accordingly, the growth morphologies of InGaAs NWs show different behavior with respect to the In/Ga ratio. (c) 2017 Author(s).

収録刊行物

• AIP Advances

  AIP Advances 7 (12), 125304-, 2017-12

  American Institute of Physics (AIP)

キーワード

• General Physics and Astronomy

詳細情報

• CRID: 1050282677651853696
• NII論文ID: 120006380383
• DOI: 10.1063/1.4993689
• HANDLE: 2115/68223
• ISSN: 21583226
• Web Site: https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/1.4993689/12924216/125304_1_online.pdf
• 本文言語コード: en
• 資料種別: journal article
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