In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates

• Yoshikawa, Genki

• Miyadera, Tetsuhiko

• Onoki, Ryo

• 上野, 啓司

• Nakai, Ikuyo

• Entani, Shiro

• Ikeda, Susumu

• Guo, Dong

• Kiguchi, Manabu

• Kondoh, Hiroshi

• Ohta, Toshiaki

• Saiki, Koichiro

Abstract

type:text

Molecular orientations of pentacene ultrathin films grown on SiO2 substrates were studied without the influence of the atmosphere by vacuum atomic force microscopy (V-AFM) and near edge X-ray absorption fine structure (NEXAFS). The experimental processes from deposition of pentacene to characterization of films were performed under vacuum condition without exposure to the atmosphere. V-AFM and NEXAFS measurements showed that pentacene molecules tend to grow on SiO2 surface with their molecular long axes perpendicular to the substrate surfaces (standing-mode) irrespective of preparation procedure of SiO2 substrate. (c) 2006 Elsevier B.V. All rights reserved.

http://www.sciencedirect.com/science/journal/00396028

Journal

• SURFACE SCIENCE

  SURFACE SCIENCE 600 (12), 2518-2522, 2006

  Elsevier Science B.V.,

Keywords

• Pentacene
• In-situ characterization
• Atomic force microscopy
• Near edge extended X-ray absorption fine structure (NEXAFS)
• Surface structure,morphology,roughness,and topography
• Silicon oxides
• Aromatics
• Thin film structures

Details

• CRID: 1050282812794640896
• NII Article ID: 120006385434
• ISSN: 00396028
• Web Site: http://id.nii.ac.jp/1586/00012942/
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • CiNii Articles