Bulk-like pentacene epitaxial films on hydrogen-terminated Si(111)

• Shimada, Toshihiro

• Nogawa, Hiroyuki

• Hasegawa, Tetsuya

• Okada, Ryusuke

• Ichikawa, Hisashi

• 上野, 啓司

• Saiki, Koichiro

抄録

type:text

The epitaxial growth of pentacene on hydrogen-terminated Si(111) is reported. Reflection high energy electron diffraction (RHEED) revealed that the crystal packing resembles that in the bulk crystal even at a monolayer thickness, which was maintained in multilayers. A ripening effect was clearly observed by atomic force microscopy (AFM). These results are important to obtain oriented crystalline films of pentacene combined with silicon microdevices with reduced defect densities. (c) 2005 American Institute of Physics.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 87 (6), 061917-1-061917-3, 2005

  American Institute of Physics

詳細情報

• CRID: 1050282812794749312
• NII論文ID: 120006385698
• ISSN: 00036951
• Web Site: http://id.nii.ac.jp/1586/00013206/
• 本文言語コード: en
• 資料種別: journal article
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