イットリウム二水素化物における電子 : 正孔補償状態と磁気抵抗<論文>

• 酒井 政道

• 南保 岳

• 中村 修

抄録

type:text

We have investigated compensation characteristics of yttrium dihydride YH2+δ (δ＝−0.03) films by measuring room-temperature galvanomagnetic properties under magnetic field B up to 1 T. The transverse voltages have been measured when a B has x and y components in addition to z component perpendicular to the sample plane. The transverse voltage shows nearly even character with respective to B, while odd characteristic could be expected from simple compensated case where the hole equals the electron only in concentration. The even character observed may be explained by letting the hole equal the electron not only in concentration but also in mobility.

収録刊行物

• 埼玉大学紀要. 工学部 第1編 第1部 論文集 = The Science and Engineering Reports of Saitama University

  埼玉大学紀要. 工学部 第1編 第1部 論文集 = The Science and Engineering Reports of Saitama University 38 45-48, 2005

  埼玉大学工学部

キーワード

• Compensation Metals
• Yttrium Dihydride
• Galvanomagnetic Property
• Hall Resistivity

詳細情報

• CRID: 1390853649743642880
• NII論文ID: 120006387912
• DOI: 10.24561/00016077
• ISSN: 18804446
• Web Site: http://id.nii.ac.jp/1586/00016077/
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • IRDB
  • CiNii Articles
  • KAKEN