Realization of direct bonding of single crystal diamond and Si substrates

• Liang, Jianbo

• Masuya, Satoshi

• Kasu, Makoto

• Shigekawa, Naoteru

抄録

Diamond/Si junctions have been achieved by surface activated bonding method without any chemical and heating treatments. Bonded interfaces were obtained that were free from voids and mechanical cracks. Observations by using transmission electron microscopy indicated that an amorphous layer with a thickness of ~20nm across the bonded interface was formed, and no structural defects were observed at the interface....

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 110 (11), 111603-, 2017-03

  AIP Publishing

キーワード

• Physics and Astronomy (miscellaneous)

詳細情報

• CRID: 1050282677424438400
• NII論文ID: 120006453318
• NII書誌ID: AA11868096
• ISSN: 10773118
• ISSN: 00036951
• DOI: 10.1063/1.4978666
• Web Site: https://dlisv03.media.osaka-cu.ac.jp/il/meta_pub/G0000438repository_10773118-110-11-111603
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4978666/13657177/111603_1_online.pdf
• 本文言語コード: en
• 資料種別: journal article
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