Dual-gate low-voltage organic transistor for pressure sensing

• Tsuji, Yushi

• Sakai ,Heisuke

• Feng, Linrun

• Guo, Xiaojun

• Murata, Hideyuki

Abstract

We simultaneously achieved low voltage operation (-5 V) and large drain current (I_D) modulation in a dual-gate organic pressure sensor in which a piezoelectric layer was stacked on a low voltage organic field-effect transistor (OFET). During testing, the I_D changed from 3.9×10^<-9> A to 2.5×10^<-11> A when a 300 kPa pressure load was applied, and the I_D clearly responded to the pressure load and release. An endurance cycle test of the device was performed using a pressure load of 100 kPa, and the I_D modulation was consistently reproduced throughout the test.

identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/15291

Journal

• Applied Physics Express

  Applied Physics Express 10 (2), 21601-1-21601-4, 2017-01-23

  IOP Publishing

Keywords

• pressure sensor
• organic transistor
• low voltage

Details

• CRID: 1050282813783608192
• NII Article ID: 120006469249
• ISSN: 18820778
• ISSN: 18820786
• DOI: 10.7567/apex.10.021601
• Web Site: http://hdl.handle.net/10119/15291
• Web Site: http://stacks.iop.org/1882-0786/10/i=2/a=021601/pdf
• Web Site: http://stacks.iop.org/1882-0786/10/i=2/a=021601?key=crossref.2b4c2f969e6c79b3ae27f4598dc6f18f
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • Crossref
  • CiNii Articles
  • KAKEN