GeSn/SiGeSn Multiple-Quantum-Well Electroabsorption Modulator With Taper Coupler for Mid-Infrared Ge-on-Si Platform

• Akie, Minami

• Fujisawa, Takeshi

• Sato, Takanori

• Arai, Masakazu

• Saitoh, Kunimasa

Abstract

We propose a taper coupler electroabsorption modulator (EAM) composed of GeSn/SiCeSn multiple-quantum-well (MQW) on Ge-on-Si platform for mid-infrared (2 mu m) integrated optical active devices. The epitaxial design is performed by calculating the absorption spectra of GeSn/SiGeSn MQW using many-body theory to investigate the extinction characteristics of GeSn MQW waveguides. Two types of taper couplers are considered for connecting Ge-rib waveguide and GeSn-MQW-highmesa waveguide efficiently. One is an adiabatic taper coupler (ATC) type EAM and it is useful for thin Ge-buffer structure in terms of the extinction ratio. Another is a resonant taper coupler (RTC) type EAM and it is superior to ATC type EAM for thick Ge-buffer. It is confirmed that RTC type EAM can obtain the high extinction characteristics with low-loss and shorter device length (6.87 dB, -3.97 dB, and 215 mu m) compared with conventional ATC type EAM for thick Ge-buffer (5.67 dB, -4.9 dB, and 340 mu m).

Journal

• IEEE journal of selected topics in quantum electronics

  IEEE journal of selected topics in quantum electronics 24 (6), 3400208-, 2018-11

  IEEE (Institute of Electrical and Electronics Engineers)

Keywords

• Mid-infrared photonics
• GeSn quantum wells

Details

• CRID: 1050282677543842304
• NII Article ID: 120006482593
• HANDLE: 2115/70800
• ISSN: 1077260X
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • CiNii Articles