Dynamical characteristics of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer investigated with use of terahertz spectroscopy
抄録
We demonstrate that, in a GaSb/GaAs epitaxial structure, a coherent longitudinal optical (LO) phonon in a GaAs buffer layer optically covered with a GaSb top layer is observed utilizing terahertz spectroscopy. It is confirmed from Raman scattering measurements that only the optical phonons in the GaSb layer is optically observable....
収録刊行物
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- AIP Conference Proceedings
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AIP Conference Proceedings 1506 (1), 73-78, 2012-12-10
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1050282677426837888
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- NII論文ID
- 120006500966
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- ISSN
- 15517616
- 0094243X
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- 本文言語コード
- en
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- 資料種別
- conference paper
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- データソース種別
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