Emission of the terahertz electromagnetic wave from coherent longitudinal optical phonons in a GaAs buffer layer optically masked by a GaSb top epitaxial layer
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We demonstrate that, in a GaSb/GaAs epitaxial structure, the coherent longitudinal optical (LO) phonon in the GaAs layer optically masked by the GaSb top layer is observed utilizing terahertz-electromagnetic-wave spectroscopy. It is confirmed from a Raman scattering measurement that only the optical phonon in the GaSb layer is optically observable, where the photon energy of the excitation laser beam was almost the same as that of the femtosecond pulse pump beam for the terahertz wave measurement....
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 98 (15), 151905-, 2011-04-13
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1050001202452452736
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- NII論文ID
- 120006500969
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- NII書誌ID
- AA11868096
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- ISSN
- 10773118
- 00036951
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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