Emission of the terahertz electromagnetic wave from coherent longitudinal optical phonons in a GaAs buffer layer optically masked by a GaSb top epitaxial layer
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Abstract
We demonstrate that, in a GaSb/GaAs epitaxial structure, the coherent longitudinal optical (LO) phonon in the GaAs layer optically masked by the GaSb top layer is observed utilizing terahertz-electromagnetic-wave spectroscopy. It is confirmed from a Raman scattering measurement that only the optical phonon in the GaSb layer is optically observable, where the photon energy of the excitation laser beam was almost the same as that of the femtosecond pulse pump beam for the terahertz wave measurement....
Journal
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- Applied Physics Letters
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Applied Physics Letters 98 (15), 151905-, 2011-04-13
AIP Publishing
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Details 詳細情報について
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- CRID
- 1050001202452452736
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- NII Article ID
- 120006500969
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- NII Book ID
- AA11868096
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- ISSN
- 10773118
- 00036951
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- Text Lang
- en
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- Article Type
- journal article
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- Data Source
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- IRDB
- Crossref
- CiNii Articles
- KAKEN