Diluted magnetic semiconductors with narrow band gaps

Access this Article

Abstract

著者所属: 日本原子力研究開発機構(JAEA)

The diluted magnetic semiconductors (DMSs) have received considerable attention owing to potential applications based on the use of both charge and spin degrees of freedom in electronic devices. Historically, (Ga,Mn)As has received the most attention in DMSs, and so far the highest Curie temperature in (Ga,Mn)As has been Tc = 190 K in the experiment. The substitution of divalent Mn atoms into trivalent Ga sites introduces hole carriers; thus, (Ga,Mn)As is a p-type DMS. Here, we propose a method to realize DMSs with p- and n-type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn2As2, which has a band gap of 0.2 eV. In addition, we found a nontoxic DMS Mn-doped BaZn2Sb2, of which the Curie temperature Tc is predicted to be higher than that of Mn-doped BaZn2As2, the Tc of which was up to 230 K in a recent experiment.

Journal

  • Physical Review B

    Physical Review B 94(15), 155202\_1-155202\_8, 2016-10

    American Physical Society

Codes

  • NII Article ID (NAID)
    120006502118
  • Text Lang
    ENG
  • Article Type
    journal article
  • ISSN
    2469-9950
  • Data Source
    IR 
Page Top