Passivation of textured crystalline silicon surfaces by catalytic CVD silicon nitride films and catalytic phosphorus doping
Access this Article
Silicon nitride (SiN_x) films formed by catalytic chemical vapor deposition (Cat-CVD) and phosphorus-doped layers formed by catalytic impurity doping (Cat-doping) are applied for the passivation of pyramid-shaped textured crystalline Si (c-Si) surfaces formed by anisotropic etching in alkaline solution. Lower surface recombination velocities (SRVs) tend to be obtained when smaller pyramids are formed on c-Si surfaces. Phosphorus Cat-doping is effective for reducing the SRV of textured c-Si surfaces as in the case of flat c-Si surfaces. We realize SRVs of textured c-Si surfaces of ~8.0 and ~6.7 cm/s for only SiN_x passivation and for the combination of SiN_x and P Cat-doping, respectively. These structures also have optical transparency and low Auger recombination loss, and are of great worth in application for the surface passivation of interdigitated back-contact c-Si solar cells.
- Japanese Journal of Applied Physics
Japanese Journal of Applied Physics 56(10), 102301-1-102301-4, 2017-09-11
The Japan Society of Applied Physics