Passivation of textured crystalline silicon surfaces by catalytic CVD silicon nitride films and catalytic phosphorus doping

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Abstract

Silicon nitride (SiN_x) films formed by catalytic chemical vapor deposition (Cat-CVD) and phosphorus-doped layers formed by catalytic impurity doping (Cat-doping) are applied for the passivation of pyramid-shaped textured crystalline Si (c-Si) surfaces formed by anisotropic etching in alkaline solution. Lower surface recombination velocities (SRVs) tend to be obtained when smaller pyramids are formed on c-Si surfaces. Phosphorus Cat-doping is effective for reducing the SRV of textured c-Si surfaces as in the case of flat c-Si surfaces. We realize SRVs of textured c-Si surfaces of ~8.0 and ~6.7 cm/s for only SiN_x passivation and for the combination of SiN_x and P Cat-doping, respectively. These structures also have optical transparency and low Auger recombination loss, and are of great worth in application for the surface passivation of interdigitated back-contact c-Si solar cells.

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 56(10), 102301-1-102301-4, 2017-09-11

    The Japan Society of Applied Physics

Codes

  • NII Article ID (NAID)
    120006522917
  • Text Lang
    ENG
  • Article Type
    journal article
  • ISSN
    0021-4922
  • Data Source
    IR  Crossref 
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