Persistent High Polarization of Excited Spin Ensembles During Light Emission in Semiconductor Quantum-Dot-Well Hybrid Nanosystems

Abstract

We demonstrate persistent high degrees of spin polarization (SPD) up to 70% during light emission in (In1-xGax) As quantum-dot-well (QD-QW) hybrid nanosystems, where QD excited states are laterally tunnel coupled through the adjacent two-dimensional QW potential depending on the QW thickness. Spinpolarized electrons are photo-excited by using circularly polarized light pulses. The decay time of spin relaxation, obtained by that of the SPD, is 70 times larger than the photoluminescence decay time. The temporally constant SPD is sustained by a selective transfer of minority spins among QDs after flipping from the majority spins, which is promoted by a moderate state filling of lower-energy spin sublevels in surrounding QDs. The spin transfer times are deduced as functions of the QW thickness and excited-spin density. These results can provide a precise control of lateral interdot spin-transfer dynamics and resultant suppression of spin relaxation in QD ensembles.

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