Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices

• 木本, 恒暢

  Department of Electronic Science and Engineering, Kyoto University A1 Katsura

抄録

The minimum specific on-resistance of 4H-SiC{0001} unipolar devices as a function of the breakdown voltage was updated based on latest studies on intrinsic physical properties, such as impact ionization coefficients. Both punch-through (PT) and nonpunch-through (NPT) structures were considered, because a PT structure generally gives a lower on-resistance at a given breakdown voltage. The minimum specific on-resistance of 1 kV 4H-SiC devices can be as low as 0.20 mΩ cm² at room temperature. An analytical expression for the relationship between the specific on-resistance and breakdown voltage is given.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 58 2019-01

  Institute of Physics Publishing

詳細情報

• CRID: 1050564288162607488
• NII論文ID: 120006550407
• NII書誌ID: AA12295836
• ISSN: 00214922
• HANDLE: 2433/236055
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles