Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices

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Abstract

The minimum specific on-resistance of 4H-SiC{0001} unipolar devices as a function of the breakdown voltage was updated based on latest studies on intrinsic physical properties, such as impact ionization coefficients. Both punch-through (PT) and nonpunch-through (NPT) structures were considered, because a PT structure generally gives a lower on-resistance at a given breakdown voltage. The minimum specific on-resistance of 1 kV 4H-SiC devices can be as low as 0.20 mΩ cm² at room temperature. An analytical expression for the relationship between the specific on-resistance and breakdown voltage is given.

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics (58), 2019-01

    Institute of Physics Publishing

Codes

  • NII Article ID (NAID)
    120006550407
  • NII NACSIS-CAT ID (NCID)
    AA12295836
  • Text Lang
    ENG
  • Article Type
    journal article
  • ISSN
    0021-4922
  • Data Source
    IR 
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