Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations

• Asada, Satoshi

  Department of Electronic Science and Engineering, Kyoto University

• Suda, Jun

  Department of Electronic Science and Engineering, Kyoto University

• Kimoto, Tsunenobu

  Department of Electronic Science and Engineering, Kyoto University

Abstract

Temperature dependence of resistivity from 250 to 900 K in p-type 4H-SiC with various doping concentrations (5.8 × 10¹⁴-7.1 × 10¹⁸ cm⁻³) was presented. The resistivity was obtained by the van der Pauw method in samples, whose doping concentrations were precisely determined in our previous work. From the experimental results, coefficients for a fitting formula with polynomial approximation were derived. We confirmed that the fitting formula can accurately estimate the resistivity of p-type SiC with wide-range doping concentrations.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 57 (8), 2018-06-29

  Japan Society of Applied Physics

Details

• CRID: 1050282813185924480
• NII Article ID: 120006552908
• NII Book ID: AA12295836
• ISSN: 00214922
• HANDLE: 2433/236134
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • CiNii Articles