Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors

• 高村, 陽太

• Takamura, Yota

• 西島, 輝

• Nishijima, Akira

• 長浜, 陽平

• Nagahama, Yohei

• 中根, 了昌

• Nakane, Ryosyo

• 菅原, 聡

• SUGAHARA, SATOSHI

Abstract

The paper presents a novel preparation technique for Si- and Gebased half-metallic full-Heusler alloy thin films, utilizing siliconon- insulator (SOI) and germanium-on-insulator (GOI) substrates, respectively. Full-Heusler Co2FeSi (Co2FeGe) alloy thin films were successfully formed by thermally activated silicidation (germanidation) reaction between an ultra-thin SOI (GOI) layer and Co/Fe layers deposited on it. This technique can easily produce fully ordered L21 structure that is necessary for the halfmetallicity of full-Heusler alloys. The proposed technique is compatible with metal source/drain formation process in advanced CMOS technology and would be applicable to the fabrication of the half-metallic source/drain of MOSFET type of spin transistors.

identifier:oai:t2r2.star.titech.ac.jp:50070327

Journal

• ECS Trans.

  ECS Trans. 16 (no. 10), 945-952, 2008-10

  The Electrochemical Society

Details

• CRID: 1050845763235359616
• NII Article ID: 120006581933
• Web Site: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100583533
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • CiNii Articles