ROOM-TEMPERATURE SINGLE MOLECULAR MEMORY
抄録
Single molecular memory operation was observed on a porphyrin derivative by scanning tunneling microscopy at room temperature. A porphyrin derivative with four disulfide groups was chemically synthesized and chemisorbed on a Au(111) surface. Coulomb blockade behaviors and switching behaviors in current-voltage (I-V) characteristics were observed on a single porphyrin derivative by scanning tunneling spectroscopy. Based on the switching behaviors, the memory operation of electrical conductance in the porphyrin derivative was demonstrated by applying a programmed pulse sequence with an on/off ratio of 2.9 at room temperature.
identifier:oai:t2r2.star.titech.ac.jp:50160935
収録刊行物
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- Applied Physics Letter
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Applied Physics Letter 100 2012-01
American Institute of Physics
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詳細情報 詳細情報について
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- CRID
- 1050564287970793088
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- NII論文ID
- 120006582159
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB
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