RFマグネトロンコスパッタ法により形成したCeO_2＋Si複合酸化物の堆積と評価 [in Japanese] DEPOSITION AND EVALUATION OF CEO_2 + SI MIXED COMPOUND OXIDES USING RF MAGNETRON CO-SPUTTERING [in Japanese]
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Mixed compound oxide films of CeO_2 and Si with various composition ratios were deposited on p-type Si (100) substrates by RF magnetron co-sputtering system equipped with φ2" metal Si and sintered CeO_2 cathodes in Ar. The samples were annealed at 800 ℃ for 30 min in a O_2 atmosphere in order to recover the deposited films from damage caused by re-sputtering by O^- ions. The XPS depth profiled measurement revealed that Ce silicates and SiO_2 were formed in the middle of films and when the atomic concentration of Ce exceeded 35.1 % in the films, the formation of Ce silicates was promoted. Compared with the middle of films, Ce silicates was promoted in the vicinity of interfaces between the films and substrates. When the concentration of Ce exceeded 35.1 % in the films, Ce silicate, SiO_2 and CeO_2 existed. The samples with the atomic concentration of Ce exceeding 35.1 % in the films represented the dielectric constant close to bulk CeO_2 from C-V measurement.
- 法政大学大学院紀要. 理工学・工学研究科編
法政大学大学院紀要. 理工学・工学研究科編 (59), 1-5, 2018-03-31