A ring oscillator consisting of pentacene thin-film transistors with controlled threshold voltages

• Takahashi, Hajime

• 北村, 雅季

• 服部, 吉晃

• Kimura, Yoshinari

抄録

Pentacene thin-film transistors (TFTs) with controlled threshold voltages have been applied to a ring oscillator consisting of enhancement/depletion inverters for evaluation of the dynamic characteristics. The threshold voltage control was demonstrated by using oxygen plasma treatment to the SiO2 gate dielectric prepared by rf sputtering. The surface roughness of the SiO2 gate dielectric depended on the sputtering condition. The use of flat SiO2 gate dielectrics contributed to the improvement of the field-effect mobilities in pentacene TFTs. As a result, the ring oscillator operated at supply voltages of 15–25 V. The oscillation frequency was consistent with the result of circuit simulation for the ring oscillator.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 58 (SB), SBBJ04-SBBJ04, 2019-04-01

  The Japan Society of Applied Physics

キーワード

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

詳細情報

• CRID: 1050012570393114752
• NII論文ID: 120006601526
• NII論文ID: 210000135446
• DOI: 10.7567/1347-4065/ab01d3
• ISSN: 13474065
• ISSN: 00214922
• HANDLE: 20.500.14094/90005776
• Web Site: http://stacks.iop.org/1347-4065/58/i=SB/a=SBBJ04/pdf
• Web Site: http://stacks.iop.org/1347-4065/58/i=SB/a=SBBJ04?key=crossref.4a95159661bb7a89d0980a91f369ffe8
• 本文言語コード: en
• 資料種別: journal article
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