Depositing Mechanism of Metal Oxide Thin Film in the Liquid Phase Deposition Process

• 水畑, 穣

• Saito, Yasuhito

• Takagi, Mariko

• Deki, Shigehito

抄録

The equilibrium reaction of fluorosilicate ion (SiF62-) in the LPD method was investigated by the measurement of UV and IR spectroscopies, Raman spectroscopy. These measurements were carried out by adding the F- scavenger such as H3BO3 and Al metal which shifts the equilibrium reaction. Also, the concentration of Si dissolving species was measured after addition of fine alpha-Al2O3 powder. These species were estimated to be involved in the LPD process as intermediates and important for controlling the deposition process of metal oxide.

収録刊行物

• ECS Transactions

  ECS Transactions 16 (46), 93-101, 2009

  Electrochemical Society

詳細情報

• CRID: 1050575520346522368
• NII論文ID: 120006629938
• ISSN: 19386737
• ISSN: 19385862
• HANDLE: 20.500.14094/90005892
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles
  • KAKEN