Depositing Mechanism of Metal Oxide Thin Film in the Liquid Phase Deposition Process

HANDLE Open Access

Abstract

The equilibrium reaction of fluorosilicate ion (SiF62-) in the LPD method was investigated by the measurement of UV and IR spectroscopies, Raman spectroscopy. These measurements were carried out by adding the F- scavenger such as H3BO3 and Al metal which shifts the equilibrium reaction. Also, the concentration of Si dissolving species was measured after addition of fine alpha-Al2O3 powder. These species were estimated to be involved in the LPD process as intermediates and important for controlling the deposition process of metal oxide.

Journal

  • ECS Transactions

    ECS Transactions 16 (46), 93-101, 2009

    Electrochemical Society

Related Projects

See more

Details 詳細情報について

  • CRID
    1050575520346522368
  • NII Article ID
    120006629938
  • ISSN
    19386737
    19385862
  • HANDLE
    20.500.14094/90005892
  • Text Lang
    en
  • Article Type
    journal article
  • Data Source
    • IRDB
    • CiNii Articles
    • KAKEN

Report a problem

Back to top