Depositing Mechanism of Metal Oxide Thin Film in the Liquid Phase Deposition Process
Abstract
The equilibrium reaction of fluorosilicate ion (SiF62-) in the LPD method was investigated by the measurement of UV and IR spectroscopies, Raman spectroscopy. These measurements were carried out by adding the F- scavenger such as H3BO3 and Al metal which shifts the equilibrium reaction. Also, the concentration of Si dissolving species was measured after addition of fine alpha-Al2O3 powder. These species were estimated to be involved in the LPD process as intermediates and important for controlling the deposition process of metal oxide.
Journal
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- ECS Transactions
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ECS Transactions 16 (46), 93-101, 2009
Electrochemical Society
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Details 詳細情報について
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- CRID
- 1050575520346522368
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- NII Article ID
- 120006629938
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- ISSN
- 19386737
- 19385862
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- HANDLE
- 20.500.14094/90005892
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- Text Lang
- en
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- Article Type
- journal article
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- Data Source
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- IRDB
- CiNii Articles
- KAKEN