Formation of Ohmic Carrier Injection at Anode/organic Interfaces and Carrier Transport Mechanisms of Organic Thin Films

• Matsushima, Toshinori

• Jin, Guang-He

• Kanai, Yoshihiro

• Yokota, Tomoyuki

• Kitada, Seiki

• Kishi, Toshiyuki

• Murata, Hideyuki

Abstract

We have shown that hole mobilities of a wide variety of organic thin films can be estimated using a steady-state space-charge-limited current (SCLC) technique due to formation of Ohmic hole injection by introducing a very thin hole-injection layer of molybdenum oxide (MoO_3) between an indium tin oxide anode layer and an organic hole-transport layer. Organic hole-transport materials used to estimate hole mobilities are 4,4',4"-tris(N-3-methylphenyl-Nphenyl-amino)triphenylamine (m-MTDATA), 4,4',4"-tris(N-2-naphthyl-N-phenylamino)triphenylamine (2-TNATA), rubrene, N,N´-di(m-tolyl)-N,N´-diphenylbenzidine (TPD), and N,N´-diphenyl-N,N´-bis(1-naphthyl)-1,1´-biphenyl-4,4´-diamine (α-NPD). These materials are found to have electric-field-dependent hole mobilities. While field dependence parameters(β) estimated from SCLCs are almost similar to those estimated using a widely used time-of-flight(TOF) technique, zero field SCLC mobilities (μ_0) are about one order of magnitude lower than zero field TOF mobilities.

identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/9843

Journal

• Materials Research Society Symposium Proceedings

  Materials Research Society Symposium Proceedings 1154 1154-B10-92-, 2009

  Materials Research Society

Keywords

• Space-charge-limited current
• molybdenum oxide
• Organic hole-transport materials
• Organic light-emitting diodes
• Hole-injection layer

Details

• CRID: 1050574047115278080
• NII Article ID: 120006674760
• ISSN: 02729172
• Web Site: http://hdl.handle.net/10119/9843
• Text Lang: en
• Article Type: conference paper
• Data Source:
  • IRDB
  • CiNii Articles