欠陥導入グラフェンの化学構造と電子物性における水素吸着効果

• 小幡 吉徳

書誌事項

タイトル別名

• HYDROGEN ADSORPTION EFFECTS ON CHEMICAL STRUCTURE AND ELECTRONIC PROPERTIES OF DEFECT-INTRODUCED GRAPHENE

抄録

type:Article

According to a theoretical calculation, hydrogenated atomic vacancies in graphene were predicted to have a low energy barrier and little adsorption heat for additional hydrogen molecules. In this study, defects were introduced into epitaxial graphene by ion beam irradiation, and their chemical structure was investigated using XPS, Raman spectroscopy, and Elastic Recoil Detection Analysis (ERDA). Exposing defects-introduced graphene by ion-beam irradiation to hydrogen molecular gas and air results in hydrogen and oxygen-terminated defects, respectively. Evaluation of hydrogen amount of the surface by ERDA and temperature programmed desorption analysis suggests that the hydrogen diffusion into the plane of graphene with hydrogen terminated vacancies.

収録刊行物

• 法政大学大学院紀要. 理工学・工学研究科編

  法政大学大学院紀要. 理工学・工学研究科編 60 1-2, 2019-03-31

  法政大学大学院理工学研究科

キーワード

• graphene
• ion beam
• chemical structure of vacancy
• hydrogen storage

詳細情報

• CRID: 1390290699801608704
• NII論文ID: 120006714964
• NII書誌ID: AA12677220
• ISSN: 21879923
• DOI: 10.15002/00021988
• Web Site: http://hdl.handle.net/10114/00021988
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • IRDB
  • CiNii Articles