Two-color surface-emitting lasers using a semiconductor coupled multilayer cavity

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Abstract

Two-color surface-emitting lasers were demonstrated, employing a GaAs/AlGaAs coupled multilayer cavity composed of two cavity layers and three distributed Bragg reflector (DBR) multilayers. InGaAs multiple quantum wells (MQWs) with two different well widths were introduced only in the upper cavity, sandwiched between p-type and n-type DBRs. This current-injection type device exhibited two-color lasing in the near-infrared region under room temperature pulsed conditions. This two-color lasing was obtained when the lower cavity had an optimal thickness relative to the upper cavity thickness and the MQW emission properties.

Journal

  • Applied Physics Express

    Applied Physics Express 9(11), 111201, 2016-10-04

    The Japan Society of Applied Physics

Codes

  • NII Article ID (NAID)
    120006767278
  • NII NACSIS-CAT ID (NCID)
    AA12295133
  • Text Lang
    ENG
  • Article Type
    journal article
  • ISSN
    1882-0778
  • Data Source
    IR  Crossref 
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