Sublattice reversal in GaAs/Ge/GaAs heterostructures grown on (113)B GaAs substrates

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Abstract

GaAs/Ge/GaAs heterostructures were grown on high-index (113)B GaAs substrates by molecular beam epitaxy. Sublattice reversal in GaAs/Ge/GaAs was identified by comparing the anisotropic etching profile of the epitaxial sample with that for reference (113)A and (113)B GaAs substrates. The shape of the resulting mesa for the lower GaAs layer was similar to that for the reference (113)B GaAs substrate, whereas that for the upper GaAs layer was similar to that for the reference (113)A GaAs substrate. An atomic-resolution analysis was also conducted by mapping using energy-dispersive X-ray spectroscopy, whereby the sublattice reversal was directly observed through the atomic arrangements.

Journal

  • Applied Physics Express

    Applied Physics Express 11(1), 015501, 2017-11-30

    The Japan Society of Applied Physics

Codes

  • NII Article ID (NAID)
    120006767280
  • NII NACSIS-CAT ID (NCID)
    AA12295133
  • Text Lang
    ENG
  • Article Type
    journal article
  • ISSN
    1882-0786
  • Data Source
    IR  Crossref 
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