Sublattice reversal in GaAs/Ge/GaAs heterostructures grown on (113)B GaAs substrates

この論文にアクセスする

この論文をさがす

抄録

GaAs/Ge/GaAs heterostructures were grown on high-index (113)B GaAs substrates by molecular beam epitaxy. Sublattice reversal in GaAs/Ge/GaAs was identified by comparing the anisotropic etching profile of the epitaxial sample with that for reference (113)A and (113)B GaAs substrates. The shape of the resulting mesa for the lower GaAs layer was similar to that for the reference (113)B GaAs substrate, whereas that for the upper GaAs layer was similar to that for the reference (113)A GaAs substrate. An atomic-resolution analysis was also conducted by mapping using energy-dispersive X-ray spectroscopy, whereby the sublattice reversal was directly observed through the atomic arrangements.

収録刊行物

  • Applied Physics Express

    Applied Physics Express 11(1), 015501, 2017-11-30

    The Japan Society of Applied Physics

各種コード

  • NII論文ID(NAID)
    120006767280
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    ENG
  • 資料種別
    journal article
  • ISSN
    1882-0786
  • データ提供元
    IR  Crossref 
ページトップへ