<Research Report>Clarifying exciton recombination paths in ultrawide-bandgap semiconductor AlN

• Funato Mitsuru

  Graduate School of Engineering, Kyoto University

• Ichikawa Syuhei

  Graduate School of Engineering, Kyoto University

• Kawakami Yoichi

  Graduate School of Engineering, Kyoto University

Bibliographic Information

Other Title

• <研究ノート>超ワイドバンドギャップ半導体AlNにおける励起子再結合過程の同定
• 超ワイドバンドギャップ半導体AlNにおける励起子再結合過程の同定
• チョウワイドバンドギャップ ハンドウタイ AlN ニ オケル レイキシ サイケツゴウ カテイ ノ ドウテイ

Abstract

Dominant nonradiative recombination paths in ultrawide-bandgap semiconductor AlN are investigated using temperature-dependent cathodoluminescence (CL) mapping measurements. The dark spot contrasts originating from nonradiative recombination at threading dislocations (TDs) drastically decrease upon elevating the temperature above ~60 K. This is interpreted by considering that generated excitons are captured by point defects (PDs) before reaching TDs. Compared with other nitride semiconductors such as GaN, AlN involves much more PDs due to the smaller formation energies of vacancies, which significantly contribute to determining the recombination process in AlN.

Journal

• 京都大学物性科学センター誌 : LTMセンター誌

  京都大学物性科学センター誌 : LTMセンター誌 33 10-17, 2018-12

  京都大学環境安全保健機構 物性科学センター

Details

• CRID: 1390290699824290176
• NII Article ID: 120006773146
• NII Article ID: 40021765339
• NII Book ID: AA12754944
• DOI: 10.14989/245118
• HANDLE: 2433/245118
• NDL BIB ID: 029416833
• ISSN: 24320587
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I029416833
• Text Lang: ja
• Data Source:
  • JaLC
  • IRDB
  • NDL
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Allowed