Smooth epitaxial copper film on sapphire surface suitable for high quality graphene growth

• Ma, Tao

• Ariga, Hiroko

• Takakusagi, Satoru

• Asakura, Kiyotaka

Abstract

Graphene, a two-dimensional material, can be grown on a metal substrate using chemical vapor deposition - this growth process is notably influenced by the crystal orientation and the roughness of the substrate surface. We prepared epitaxial Cu(111) films on sapphire substrates using thermal evaporation at various substrate temperatures and studied their crystal orientation and roughness. The well crystallized Cu(111) film with a smooth surface was obtained when the substrate was maintained at 473 K during the deposition. High quality graphene with few intrinsic defects was grown on this Cu film.

Journal

• Thin solid films

  Thin solid films 646 12-16, 2018-01-31

  Elsevier

Keywords

• Epitaxial growth
• Cu(111) films
• Crystal orientation
• Roughness
• Chemical vapor deposition
• Defects

Details

• CRID: 1050002212665364864
• NII Article ID: 120006781555
• DOI: 10.1016/j.tsf.2017.11.009
• HANDLE: 2115/76637
• ISSN: 00406090
• Web Site: https://api.elsevier.com/content/article/PII:S0040609017308453?httpAccept=text/xml
• Web Site: https://api.elsevier.com/content/article/PII:S0040609017308453?httpAccept=text/plain
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • Crossref
  • CiNii Articles
  • KAKEN