RAPD Analysis of Genotoxic Effects of Nano–Scale SiO_2 and TiO_2 on Broad Bean (Vicia Faba L.)

DOI HANDLE オープンアクセス
  • GALAL A. Ola
    Department of Genetics, Faculty of Agriculture, Kafrelsheikh University
  • THABET F. Ahmad
    九州大学大学院農学研究院資源生物科学部門
  • 津田 みどり
    九州大学大学院農学研究院資源生物科学部門
  • El–SAMAHY F.M. Magdy
    Field Crop Pests Research Department, Plant Protection Research Institute, Agricultural Research Center

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抄録

Growing use of oxide nanoparticles has driven their access to the natural environment, including biological interactions within the ecosystem, despite a lack of knowledge about their genotoxic potential on exposed plant tissue. In this study, seeds of broad beans (Vicia faba L.), one of the major carbohydrate food sources as well as an ecotoxicological model plant, were treated with three concentrations (25, 50 and 75 mg/L) of two different types of nanoscale materials (n–), n–SiO＿2 and n–TiO＿2, to assess their safe use. Seeds were soaked in n–SiO＿2 and n–TiO＿2 each for 24 h, then germinated in peat moss for two weeks. DNA was isolated from leaves for RAPD (Random Amplified Polymorphic DNA) profile analyses. Results revealed a concentration dependent genotoxic effect for n–SiO＿2 (however it seems to maintain genetic material stability) and high genotoxic effect for n–TiO＿2.

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詳細情報 詳細情報について

  • CRID
    1390009224683900672
  • NII論文ID
    120006812422
  • NII書誌ID
    AA00247166
  • DOI
    10.5109/2558893
  • HANDLE
    2324/2558893
  • ISSN
    00236152
  • 本文言語コード
    en
  • データソース種別
    • JaLC
    • IRDB
    • Crossref
    • CiNii Articles

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