塗布プロセスにより作製した高性能トップゲート型有機薄膜トランジスタ

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  • High performance top-gate organic transistors fabricated by solution process
  • トフ　プロセス　ニ　ヨリ　サクセイ　シタ　コウセイノウ　トップゲート　ガタ　ユウキ　ハクマク　トランジスタ

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Electrical characteristics of solution-processed top-gate organic field-effect transistors based on different polycrystalline and amorphous organic semiconductors are systematically investigated to show that the field-effect transistors with top-gate configuration exhibit high performance electrical characteristics. The top-gate organic transistors based on typical polycrystalline polymer semiconductors exhibit high field-effect mobility irrespective of their side chain lengths and dielectric constants of gate dielectrics. This reveals that highly ordered structures are spontaneously formed at the surface of solution-processed polymer thin films, which serve as active channel of top-gate transistors. The top-gate organic transistors with different polycrystalline and amorphous organic semiconductors exhibit extremely high operational stability as compared with hydrogenated amorphous silicon thin film transistors. These results clearly show that organic field-effect transistors with top-gate configuration play an important role in the development of high-performance applications such as integrated circuits, backplane of displays, and radio-frequency identification tags using a solution process.

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