Evaluation of organic metal-oxide-semiconductor capacitors based on a distributed constant circuit

• Kimura, Yoshinari

• 服部, 吉晃

• 北村, 雅季

抄録

The capacitance characteristics of pentacene metal-oxide-semiconductor (MOS) capacitors with a large uncovered pentacene area have been investigated. The capacitance measured was examined by assuming that the uncovered area is represented by a distributed constant circuit. The frequency dependence of the capacitance was reproduced by an equation derived based on the assumption. The sheet resistance for the uncovered area of a MOS capacitor was calculated as a function of the gate voltage from the capacitance measured. The mobility of a MOS capacitor with an uncovered area was estimated by fitting a curve to the gate voltage dependence of the sheet resistance, and was in the range of 0.48-0.64 cm(2) V(-1) s(-1). In addition, the mobilities were compared with those calculated from the current-voltage characteristics of pentacene transistors fabricated on the same substrate.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 59 (3), 036503-036503, 2020-03-01

  The Japan Society of Applied Physics

キーワード

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

詳細情報

• CRID: 1050856995322329600
• NII論文ID: 120006876722
• NII書誌ID: AA12295836
• DOI: 10.35848/1347-4065/ab755b
• ISSN: 13474065
• ISSN: 00214922
• HANDLE: 20.500.14094/90007352
• Web Site: https://iopscience.iop.org/article/10.35848/1347-4065/ab755b
• Web Site: https://iopscience.iop.org/article/10.35848/1347-4065/ab755b/pdf
• 本文言語コード: en
• 資料種別: journal article
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