Influence of Vacuum UV irradiation on electrical and optical properties of organic field-effect transistors based on poly(alkyfluorene)

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  • ポリアルキルフルオレン有機電界効果トランジスタの真空紫外光照射による電気的光学的特性への影響
  • ポリアルキルフルオレン　ユウキ　デンカイ　コウカ　トランジスタ　ノ　シンクウ　シガイコウ　ショウシャ　ニ　ヨル　デンキ　テキ　コウガク　テキ　トクセイ　ヘ　ノ　エイキョウ

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Abstract

The fabrication and electrical and optical properties of top-gate-type organic field effect transistors (OFETs) utilizing poly(9,9dioctylfluorenyl-2,7-diyl) (F8) were investigated. The OFETs utilizing F8 showed ambipolar characteristics and blue emission. Then, the Ag nano-ink was used for the gate electrode to fabricate OFETs only in the solution-process. The amorphous fluoro-polymer Cytop (Asahi Glass Co., Ltd.) which has good solution barrier properties was used for the gate insulator and the vacuum ultraviolet (VUV) light was irradiated on Cytop film in the mixture atmosphere of nitrogen and oxygen to decrease water-shedding quality of the film. As a result, the surface energy of Cytop was increased by VUV irradiation, and the gate electrode was fabricated in solution-process on the Cytop film by using the Ag nano-ink. In addition, the p-type output characteristic of OFET was achieved by all solution process method. However, after irradiated VUV light, the photo-degradation of F8 was observed. Consequently, the saturation current of OFETs in the electron enhancement mode markedly decreased, and the EL emission was not observed. It is suggested that the oxygen bindings were generated to F8 film by VUV irradiation, and acted as an electron trap sites.

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