Room-temperature direct bonding of diamond and Al
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Abstract
Direct bonding of diamond and Al is achieved by surface activated bonding at room temperature. The interfacial structures of the diamond/Al bonding interface with annealing at different temperatures are investigated under in-situ annealing in a transmission electron microscope (TEM). An amorphous layer with a thickness of 4 ± 0.5 nm is formed at the bonding interface without annealing, the thickness of the amorphous layer decreases with increasing annealing temperature, the amorphous layer vanished after annealing at 600 ℃. No structural defects are observed at the bonding interface with annealing at different temperatures.
Journal
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- Scripta Materialia
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Scripta Materialia 159 58-61, 2019-01-15
Elsevier
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Details 詳細情報について
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- CRID
- 1050005667186134784
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- NII Article ID
- 120006957157
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- NII Book ID
- AA11540027
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- ISSN
- 13596462
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- Text Lang
- en
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- Article Type
- journal article
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- Data Source
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- IRDB
- Crossref
- CiNii Articles
- KAKEN