Structural effects on carrier doping in carbon nanotube thin-film transistors

• 高, 燕林

• 岡田, 晋

抄録

Based on density functional theory, we studied the electronic properties of carbon nanotube (CNT) thin films under an external electric field. The carrier accumulation resulting from an electric field depends slightly on the CNT species that form the thin films and their arrangement with respect to the electrode. Although most of the carriers are accumulated in the CNTs located at the electrode side, wave function hybridization between semiconducting CNTs slightly enhances the carrier penetration into the opposite CNT layer. Metallic CNTs strongly depress or enhance the carrier penetration for the thin films when they are located at the electrode side or not, respectively.

収録刊行物

• Journal of Applied Physics

  Journal of Applied Physics 127 (13), 134301-, 2020-04

  American Institute of Physics

キーワード

• General Physics and Astronomy

詳細情報

• CRID: 1050285299949675392
• NII論文ID: 120007127615
• NII書誌ID: AA00693547
• DOI: 10.1063/5.0004886
• ISSN: 10897550
• ISSN: 00218979
• HANDLE: 2241/00160264
• Web Site: https://tsukuba.repo.nii.ac.jp/records/54858
• Web Site: https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0004886/14769099/134301_1_online.pdf
• 本文言語コード: en
• 資料種別: journal article
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