Influence of interlayer stacking on gate-induced carrier accumulation in bilayer MoS2

• MARUYAMA, Mina

• OKADA, Susumu

• NAGASHIO, Kosuke

Bibliographic Information

Other Title

• Influence of Interlayer Stacking on Gate-Induced Carrier Accumulation in Bilayer MoS₂

Journal

• ACS Applied Electronic Materials

  ACS Applied Electronic Materials 2 (5), 1352-1357, 2020-04-21

  American Chemical Society

Keywords

• Materials Chemistry
• Electrochemistry
• Electronic, Optical and Magnetic Materials

Details

• CRID: 1050848249881374592
• NII Article ID: 120007127633
• DOI: 10.1021/acsaelm.0c00139
• ISSN: 26376113
• HANDLE: 2241/00160244
• Web Site: https://tsukuba.repo.nii.ac.jp/records/54837
• Web Site: https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00139
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • Crossref
  • CiNii Articles
  • KAKEN