Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

• Sato, Soshi

• Kakushima, Kuniyuki

• Ahmet, Parhat

• 大毛利, 健治

• Natori, Kenji

• 山田, 啓作

• Iwai, Hiroshi

収録刊行物

• Microelectronics and reliability

  Microelectronics and reliability 51 (5), 879-884, 2011-05

  Elsevier Ltd

詳細情報

• CRID: 1050001202653135872
• NII論文ID: 120007130892
• NII書誌ID: AA00738419
• HANDLE: 2241/113351
• ISSN: 00262714
• Web Site: https://tsukuba.repo.nii.ac.jp/records/24651
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles