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Terahertz electromagnetic pulses can serve as a new and unique tool for various types of spectroscopy. We first characterized the temporal and spatial properties of THz pulses generated from a large-aperture photoconductive antena, and then used them for the study of the ultrafast dynamics of electrons in semiconductros. We studied the dynamics of electrons generated by femtosecond optical pulses with positive and negative excess energies in GaAs and InP by observing the waveform of the emitted THz radiation. Subpicosecond intraband relaxation was observed with positive excess energies. With negative excess energies, a picosecond transition from the Urbach state to free carrier states was observed.
収録刊行物
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- Science and technology of advanced materials
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Science and technology of advanced materials 6 649-655, 2005-09
Elsevier Ltd
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詳細情報 詳細情報について
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- CRID
- 1050001202631792256
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- NII論文ID
- 120007131282
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- NII書誌ID
- AA11561821
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- ISSN
- 14686996
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- HANDLE
- 2241/104188
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB
- CiNii Articles