Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties

• 梅田, 享英

• Sato, Shin-ichiro

• Narahara, Takuma

• Abe, Yuta

• Hijikata, Yasuto

• Ohshima, Takeshi

収録刊行物

• Journal of Applied Physics

  Journal of Applied Physics 126 (8), 083105-, 2019-08

  American Institute of Physics

詳細情報

• CRID: 1050567175345918336
• NII論文ID: 120007132685
• NII書誌ID: AA00693547
• HANDLE: 2241/00161476
• ISSN: 00218979
• Web Site: https://tsukuba.repo.nii.ac.jp/records/56072
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles