Near room temperature chemical vapor deposition of graphene with diluted methane and molten gallium catalyst
抄録
<jats:title>Abstract</jats:title><jats:p>Direct growth of graphene integrated into electronic devices is highly desirable but difficult due to the nominal ~1000 °C chemical vapor deposition (CVD) temperature, which can seriously deteriorate the substrates. Here we report a great reduction of graphene CVD temperature, down to 50 °C on sapphire and 100 °C on polycarbonate, by using dilute methane as the source and molten gallium (Ga) as catalysts. The very low temperature graphene synthesis is made possible by carbon attachment to the island edges of pre-existing graphene nuclei islands, and causes no damages to the substrates. A key benefit of using molten Ga catalyst is the enhanced methane absorption in Ga at lower temperatures; this leads to a surprisingly low apparent reaction barrier of ~0.16 eV below 300 °C. The faster growth kinetics due to a low reaction barrier and a demonstrated low-temperature graphene nuclei transfer protocol can facilitate practical direct graphene synthesis on many kinds of substrates down to 50–100 °C. Our results represent a significant progress in reducing graphene synthesis temperature and understanding its mechanism.</jats:p>
収録刊行物
-
- Scientific Reports
-
Scientific Reports 7 12371-, 2017-12
Nature Publishing Group
- Tweet
キーワード
詳細情報 詳細情報について
-
- CRID
- 1050001202795882624
-
- NII論文ID
- 120007134786
-
- ISSN
- 20452322
-
- HANDLE
- 2241/00148500
-
- 本文言語コード
- en
-
- 資料種別
- journal article
-
- データソース種別
-
- IRDB
- Crossref
- CiNii Articles
- KAKEN