Effect of structural deformation on carrier accumulation in semiconducting carbon nanotubes under an external electric field
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Abstract
<jats:title>Abstract</jats:title> <jats:p>We study the effect of structural deformation on carrier accumulation in semiconducting carbon nanotubes (CNTs) under the external electric field, on the basis of the density functional theory combined with the effective screening medium method. The capacitances of the CNTs with ellipsoidal and squashed cross sections are different from that of the pristine CNT owing to the distribution of accumulated carriers depending on the CNT deformation and arrangements with respect to the electric field direction. The results suggest that the cross section and arrangement of deformed CNTs result in gate voltage variations for both electron and hole injection, causing the degradation of CNT-based field-effect electronic devices.</jats:p>
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 55 (4), 045101-, 2016-04
IOP Publishing
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Details 詳細情報について
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- CRID
- 1050001202625952640
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- NII Article ID
- 120007135559
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- NII Book ID
- AA12295836
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- HANDLE
- 2241/00142023
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- Web Site
- https://tsukuba.repo.nii.ac.jp/records/38226
- http://stacks.iop.org/1347-4065/55/i=4/a=045101/pdf
- http://stacks.iop.org/1347-4065/55/i=4/a=045101?key=crossref.f1ac939cc679e85c3772caf815537a79
- https://iopscience.iop.org/article/10.7567/JJAP.55.045101
- https://iopscience.iop.org/article/10.7567/JJAP.55.045101/pdf
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- Text Lang
- ja
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- Article Type
- journal article
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- Data Source
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- IRDB
- Crossref
- CiNii Articles
- KAKEN