Semipolar {n[n¯]01} InGaN/GaN ridge quantum wells (n = 1−3) fabricated by a regrowth technique

• 船戸, 充

• Kotani, Teruhisa

• Kondou, Takeshi

• Kawakami, Yoichi

抄録

Semipolar {n[n¯]01} InGaN/GaN quantum wells (QWs) (n = 1−3) are fabricated on top of GaN microstructures, which consist of semipolar {1Ī01} facets. Semipolar planes are obtained via regrowth of three-dimensional structures on (0001) GaN templates under controlled growth conditions. Compared to QWs on {1Ī01} facets, {n[n¯]01} ridge QWs show an intense emission at ∼ 440 nm. Time resolved photoluminescence reveals that the radiative lifetime of excitons in {n[n¯]01} InGaN ridge QWs at 13 K is 310 ps, which is comparable to that in {1Ī01} QWs. The estimated internal quantum efficiency at room temperature is as high as 57%.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 100 (16), 2012-04

  American Institute of Physics

キーワード

• excitons
• gallium compounds
• III-V semiconductors
• indium compounds
• MOCVD
• photoluminescence
• radiative lifetimes
• semiconductor growth
• semiconductor quantum wells
• time resolved spectra
• vapour phase epitaxial growth
• wide band gap semiconductors

詳細情報

• CRID: 1050289377896194688
• NII論文ID: 120007145038
• NII書誌ID: AA00543431
• ISSN: 00036951
• HANDLE: 2433/155465
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles